FDG1024NZ

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements

2

Power Max

300mW

Element Configuration

Dual

Terminal Sayısı

6

Contact Plating

Tin

Gate Charge Qg Max Vgs

2.6nC @ 4.5V

Max Power Dissipation

360mW

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

10 Weeks

Turn On Delay Time

3.7 ns

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Fet Feature

Logic Level Gate

Drainsource On Resistancemax

0.175Ohm

Rise Time

1.7ns

Uzunluk

2mm

Vgsth Max Id

1V @ 250μA

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

20V

Kurşunsuz

Lead Free

Pin Sayısı

6

Montaj

Surface Mount

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Rds On Max Id Vgs

175m Ω @ 1.2A, 4.5V

Drain To Source Breakdown Voltage

20V

Seri

PowerTrench®

Power Dissipation

360mW

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Threshold Voltage

800mV

Transistor Element Material

SILICON

Yayın Yılı

2007

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Genişlik

1.25mm

RoHS Durumu

ROHS3 Compliant