FDC6420C

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Power Dissipation

960mW

Current Continuous Drain Id25

3A 2.2A

Rds On Max Id Vgs

70m Ω @ 3A, 4.5V

Akım Değeri

3A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Continuous Drain Current Id

3A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

4.6nC @ 4.5V

Terminal Sayısı

6

Rise Time

12ns

Fall Time Typ

12 ns

Number Of Elements

2

Reach Svhc

No SVHC

Direnç

70MOhm

Radyasyon Dayanımı

No

Fet Type

N and P-Channel

Kurşunsuz Kodu

yes

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Turn Off Delay Time

10 ns

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

12V

Seri

PowerTrench®

Terminal Kaplaması

TIN (SN)

Terminal

SMD/SMT

Yükseklik

900μm

Input Capacitance Ciss Max Vds

324pF @ 10V

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

260

Kurşunsuz

Lead Free

Weight

36mg

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Max Junction Temperature Tj

150°C