FDC6327C

Teknik Özellikler

Power Dissipation

960mW

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

2.7A 1.9A

Rds On Max Id Vgs

80m Ω @ 2.7A, 4.5V

Akım Değeri

2.7A

Gate Charge Qg Max Vgs

4.5nC @ 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Continuous Drain Current Id

1.9A

Rise Time

14ns

Terminal Sayısı

6

Reach Svhc

No SVHC

Number Of Elements

2

Genişlik

1.7mm

Radyasyon Dayanımı

No

Fet Type

N and P-Channel

Direnç

80MOhm

Kurşunsuz Kodu

yes

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Turn Off Delay Time

14 ns

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Fet Feature

Logic Level Gate

Seri

PowerTrench®

Gate To Source Voltage Vgs

8V

Terminal Kaplaması

TIN (SN)

Power Max

700mW

Terminal

SMD/SMT

Yükseklik

1.1mm

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

325pF @ 10V

Ambalaj

Tape & Reel (TR)

Weight

36mg

Kurşunsuz

Lead Free

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Junction Temperature Tj

150°C

Transistor Application

SWITCHING

Nominal Vgs

900 mV

Terminal Formu

GULL WING