FDC6312P

Teknik Özellikler

Kurşunsuz Kodu

yes

Direnç

115MOhm

Fet Type

2 P-Channel (Dual)

Genişlik

1.7mm

Number Of Elements

2

Fall Time Typ

13 ns

Reach Svhc

No SVHC

Terminal Sayısı

6

Rise Time

13ns

Continuous Drain Current Id

2.3A

Gate Charge Qg Max Vgs

7nC @ 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Akım Değeri

-2.3A

Rds On Max Id Vgs

115m Ω @ 2.3A, 4.5V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

960mW

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

8V

Seri

PowerTrench®

Fet Feature

Logic Level Gate

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Turn Off Delay Time

18 ns

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Drain To Source Breakdown Voltage

-20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

Nominal Vgs

-900 mV

Transistor Application

SWITCHING

Max Junction Temperature Tj

150°C

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kurşunsuz

Lead Free

Weight

36mg

Ambalaj

Tape & Reel (TR)

Input Capacitance Ciss Max Vds

467pF @ 10V

RoHS Durumu

ROHS3 Compliant