FDC6302P

Teknik Özellikler

Akım Değeri

-120mA

Rds On Max Id Vgs

10 Ω @ 200mA, 4.5V

Current Continuous Drain Id25

120mA

Operating Mode

ENHANCEMENT MODE

Power Dissipation

900mW

Kurşunsuz Kodu

yes

Radyasyon Dayanımı

No

Fet Type

2 P-Channel (Dual)

Fall Time Typ

5 ns

Number Of Elements

2

Genişlik

1.68mm

Reach Svhc

No SVHC

Terminal Sayısı

6

Rise Time

8ns

Continuous Drain Current Id

-120mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

0.31nC @ 4.5V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn Off Delay Time

9 ns

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

8V

Fet Feature

Logic Level Gate

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Voltage Rated Dc

-25V

Yükseklik

1.12mm

Power Max

700mW

Terminal

SMD/SMT

Drain To Source Breakdown Voltage

-25V

Çalışma Sıcaklığı

-55°C~150°C TJ

Nominal Vgs

-1 V

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Tape & Reel (TR)

Weight

36mg

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant