Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Tepe Reflow Süresi (maks. sn)
- 40
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Transition Frequency
- 4MHz
- JESD-609 Kodu
- e3
- Yayın Yılı
- 2006
- Reach Svhc
- No SVHC
- Weight
- 4.535924g
- Parça Durumu
- Active
- Uzunluk
- 10.2616mm
- Hfemin
- 30
- Power Dissipation
- 50W
- Max Collector Current
- 2A
- Gain Bandwidth Product
- 4MHz
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 100mA 5V
- Yüzey Montaj
- NO
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 50W
- Additional Feature
- LEADFORM OPTIONS ARE AVAILABLE
- Fabrika Tedarik Süresi
- 8 Weeks
- Case Connection
- COLLECTOR
- Montaj Tipi
- Through Hole
- Voltage Rated Dc
- 450V
- Polaritychannel Type
- NPN
- Vce Saturation Max Ib Ic
- 1V @ 200mA, 1A
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Transistor Application
- SWITCHING
- Collectoremitter Saturation Voltage
- 1V
- Kılıf / Paket
- TO-220-3
- Transistor Type
- NPN
- Emitter Base Voltage Vebo
- 5V
- Collector Emitter Voltage Vceo
- 450V
- Jedec95 Code
- TO-220AB
- Kurşunsuz Kodu
- yes
- Frekans
- 4MHz
- Collector Base Voltage Vcbo
- 1kV
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