BD810

Teknik Özellikler

Transistor Application

AMPLIFIER

Case Connection

COLLECTOR

Kılıf / Paket

TO-220-3

Lifecycle Status

OBSOLETE (Last Updated: 1 week ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Gain Bandwidth Product

1.5MHz

Number Of Elements

1

Kurşunsuz

Contains Lead

Montaj Tipi

Through Hole

Currentcollector Ic Max

10A

Collector Base Voltage Vcbo

80V

Collector Emitter Voltage Vceo

1.1V

Kurşunsuz Kodu

no

Power Dissipation

90W

Max Collector Current

10A

Yayın Yılı

2010

Tepe Reflow Süresi (maks. sn)

30

Voltage Rated Dc

-80V

Emitter Base Voltage Vebo

5V

Element Configuration

Single

Terminal Sayısı

3

Vce Saturation Max Ib Ic

1.1V @ 300mA, 3A

Transistor Type

PNP

Current Collector Cutoff Max

1mA ICBO

Yüzey Montaj

NO

Tepe Reflow Sıcaklığı (°C)

240

Polaritychannel Type

PNP

Transition Frequency

1.5MHz

Max Power Dissipation

90W

Parça Durumu

Obsolete

Terminal Kaplaması

Tin/Lead (Sn/Pb)

JESD-609 Kodu

e0

Ambalaj

Tube

REACH Uyumluluk Kodu

not_compliant

Qualification Status

Not Qualified

RoHS Durumu

Non-RoHS Compliant

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB