Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ambalaj
- Tube
- Gain Bandwidth Product
- 3MHz
- Transistor Element Material
- SILICON
- Transition Frequency
- 3MHz
- ECCN Kodu
- EAR99
- Uzunluk
- 8mm
- Kurşunsuz Kodu
- yes
- Emitter Base Voltage Vebo
- -5V
- Vce Saturation Max Ib Ic
- 800mV @ 100mA, 1A
- Pin Sayısı
- 3
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Kılıf / Paket
- TO-225AA, TO-126-3
- Çalışma Sıcaklığı
- 150°C TJ
- Montaj Tipi
- Through Hole
- Dc Current Gain Hfe Min Ic Vce
- 63 @ 150mA 2V
- Parça Durumu
- Obsolete
- Hfemin
- 40
- Max Collector Current
- 3A
- Collectoremitter Breakdown Voltage
- 45V
- Weight
- 761mg
- Element Configuration
- Single
- Collectoremitter Saturation Voltage
- -800mV
- Kurşunsuz
- Lead Free
- Genişlik
- 3.25mm
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Yükseklik
- 11mm
- Yayın Yılı
- 2002
- Fabrika Tedarik Süresi
- 36 Weeks
- Polaritychannel Type
- PNP
- Transistor Type
- PNP
- Max Power Dissipation
- 30W
- Voltage Rated Dc
- -45V
- Montaj
- Through Hole
- Contact Plating
- Tin
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Base Voltage Vcbo
- -45V
- Collector Emitter Voltage Vceo
- 45V
- Power Dissipation
- 30W
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