BD17510STU

Teknik Özellikler

Collector Emitter Voltage Vceo

45V

Collector Base Voltage Vcbo

45V

Power Dissipation

30W

Terminal Sayısı

3

Frekans

3MHz

Akım Değeri

3A

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Current Collector Cutoff Max

100μA ICBO

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Yayın Yılı

2000

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Polaritychannel Type

NPN

Fabrika Tedarik Süresi

2 Weeks

Transistor Type

NPN

Max Power Dissipation

30W

Voltage Rated Dc

45V

Contact Plating

Tin

Montaj

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Vce Saturation Max Ib Ic

800mV @ 100mA, 1A

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

150°C TJ

Kılıf / Paket

TO-225AA, TO-126-3

Dc Current Gain Hfe Min Ic Vce

63 @ 150mA 2V

Hfemin

40

Parça Durumu

Active

Qualification Status

Not Qualified

Max Collector Current

3A

Weight

761mg

Collectoremitter Breakdown Voltage

45V

Element Configuration

Single

Collectoremitter Saturation Voltage

800mV

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Gain Bandwidth Product

3MHz

Ambalaj

Tube