BD13710S

Teknik Özellikler

Terminal Sayısı

3

Collector Base Voltage Vcbo

60V

Collector Emitter Voltage Vceo

60V

Power Dissipation

1.25W

RoHS Durumu

RoHS Compliant

Terminal Kaplaması

Tin (Sn)

Current Collector Cutoff Max

100nA ICBO

Akım Değeri

1.5A

Jesd30 Code

R-PSFM-T3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Polaritychannel Type

NPN

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Voltage Rated Dc

60V

Montaj

Through Hole

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Type

NPN

Max Power Dissipation

1.25W

Dc Current Gain Hfe Min Ic Vce

63 @ 150mA 2V

Hfemin

40

Parça Durumu

Obsolete

Qualification Status

Not Qualified

Max Collector Current

1.5A

Vce Saturation Max Ib Ic

500mV @ 50mA, 500mA

Kılıf / Paket

TO-225AA, TO-126-3

Çalışma Sıcaklığı

150°C TJ

Montaj Tipi

Through Hole

Temel Parça No

BD137

Collectoremitter Breakdown Voltage

60V

Weight

761mg

Element Configuration

Single

Collectoremitter Saturation Voltage

500mV

Kurşunsuz

Lead Free

Transition Frequency

250MHz

Transistor Element Material

SILICON

Ambalaj

Bulk

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Emitter Base Voltage Vebo

5V