BC639-16ZL1

Teknik Özellikler

Terminal Sayısı

3

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA 2V

HTS Kodu

8541.21.00.75

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

JESD-609 Kodu

e0

Tepe Reflow Sıcaklığı (°C)

240

Current Collector Cutoff Max

100nA ICBO

Qualification Status

Not Qualified

Max Collector Current

1A

Transistor Element Material

SILICON

Vce Saturation Max Ib Ic

500mV @ 50mA, 500mA

Max Power Dissipation

625mW

Polaritychannel Type

NPN

Additional Feature

EUROPEAN PART NUMBER

Continuous Collector Current

1A

Yayın Yılı

2004

Ambalaj

Tape & Box (TB)

Kurşunsuz

Contains Lead

RoHS Durumu

Non-RoHS Compliant

Tepe Reflow Süresi (maks. sn)

30

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Collectoremitter Saturation Voltage

500mV

Transistor Type

NPN

Collector Base Voltage Vcbo

80V

Parça Durumu

Obsolete

Çalışma Sıcaklığı

-55°C~150°C TJ

Emitter Base Voltage Vebo

5V

Hfemin

25

ECCN Kodu

EAR99

Transition Frequency

200MHz

Number Of Elements

1

REACH Uyumluluk Kodu

not_compliant

Collectoremitter Breakdown Voltage

80V

Jesd30 Code

O-PBCY-T3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Voltage Rated Dc

80V

Montaj Tipi

Through Hole

Akım Değeri

1A

Montaj

Through Hole

Gain Bandwidth Product

200MHz