Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Through Hole
- Transition Frequency
- 150MHz
- Frekans
- 150MHz
- Collector Base Voltage Vcbo
- -80V
- Qualification Status
- Not Qualified
- Terminal Pozisyonu
- BOTTOM
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Current Collector Cutoff Max
- 15nA ICBO
- Max Breakdown Voltage
- 65V
- Collector Emitter Voltage Vceo
- 65V
- JESD-609 Kodu
- e3
- Power Dissipation
- 500mW
- Max Collector Current
- 100mA
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Max Power Dissipation
- 500mW
- Element Configuration
- Single
- Voltage Rated Dc
- -65V
- Collectoremitter Breakdown Voltage
- 65V
- Collectoremitter Saturation Voltage
- -250mV
- Temel Parça No
- BC556
- Transistor Type
- PNP
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Weight
- 240mg
- Akım Değeri
- -100mA
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Kurşunsuz
- Lead Free
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 5V
- Yayın Yılı
- 2007
- ECCN Kodu
- EAR99
- Emitter Base Voltage Vebo
- -5V
- Fabrika Tedarik Süresi
- 7 Weeks
- Transistor Element Material
- SILICON
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