Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Collectoremitter Saturation Voltage
- 250mV
- Element Configuration
- Single
- Collector Emitter Voltage Vceo
- 65V
- Ambalaj
- Tape & Box (TB)
- Reach Svhc
- No SVHC
- Terminal Pozisyonu
- BOTTOM
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Max Breakdown Voltage
- 65V
- Transition Frequency
- 300MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Frekans
- 300MHz
- Collector Base Voltage Vcbo
- 80V
- Hfemin
- 110
- Pin Sayısı
- 3
- Polaritychannel Type
- NPN
- Emitter Base Voltage Vebo
- 6V
- Gain Bandwidth Product
- 300MHz
- Çalışma Sıcaklığı
- 150°C TJ
- Uzunluk
- 4.58mm
- Weight
- 240.007063mg
- Transistor Type
- NPN
- Radyasyon Dayanımı
- No
- Genişlik
- 3.86mm
- Voltage Rated Dc
- 65V
- Collectoremitter Breakdown Voltage
- 65V
- Temel Parça No
- BC546
- JESD-609 Kodu
- e3
- Max Power Dissipation
- 500mW
- Power Dissipation
- 500mW
- Max Collector Current
- 100mA
- Current Collector Cutoff Max
- 15nA ICBO
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Montaj Tipi
- Through Hole
- Contact Plating
- Tin
- Yükseklik
- 4.58mm
- ECCN Kodu
- EAR99
- Akım
- 100mA
- Transistor Element Material
- SILICON
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