Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Terminal Pozisyonu
- BOTTOM
- Max Collector Current
- 800mA
- Montaj Tipi
- Through Hole
- Collectoremitter Saturation Voltage
- -700mV
- Terminal Sayısı
- 3
- HTS Kodu
- 8541.21.00.75
- Tepe Reflow Süresi (maks. sn)
- 40
- Qualification Status
- Not Qualified
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Parça Durumu
- Obsolete
- Montaj
- Through Hole
- Collectoremitter Breakdown Voltage
- 45V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Max Power Dissipation
- 625mW
- Currentcollector Ic Max
- 800mA
- Transition Frequency
- 260MHz
- Number Of Elements
- 1
- Transistor Type
- PNP
- Emitter Base Voltage Vebo
- 5V
- RoHS Durumu
- Non-RoHS Compliant
- Collector Emitter Voltage Vceo
- 700mV
- Yayın Yılı
- 2006
- Voltage Rated Dc
- -45V
- Pin Sayısı
- 3
- Element Configuration
- Single
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Hfemin
- 160
- ECCN Kodu
- EAR99
- Gain Bandwidth Product
- 260MHz
- JESD-609 Kodu
- e1
- Collector Base Voltage Vcbo
- -50V
- Kurşunsuz
- Contains Lead
- Tepe Reflow Sıcaklığı (°C)
- 260
- Polaritychannel Type
- PNP
- Jesd30 Code
- O-PBCY-T3
- Ambalaj
- Bulk
- Transistor Application
- AMPLIFIER
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 100mA 1V
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