BAS21M3T5G

Teknik Özellikler

Max Reverse Leakage Current

100nA

Forward Current

200mA

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Recovery Time

50 ns

Pin Sayısı

3

JESD-609 Kodu

e3

Genişlik

850μm

Forward Voltage

1.25V

Max Reverse Voltage Dc

250V

Reverse Recovery Time

50 ns

Max Repetitive Reverse Voltage Vrrm

250V

Peak Nonrepetitive Surge Current

625mA

Diode Type

Standard

Operating Temperature Junction

-55°C~150°C

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Parça Durumu

Active

Kılıf / Paket

SOT-723

Capacitance Vr F

5pF @ 0V 1MHz

Kurşunsuz

Lead Free

Average Rectified Current

200mA

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

8 Weeks

HTS Kodu

8541.10.00.70

Montaj Tipi

Surface Mount

Contact Plating

Tin

Current Average Rectified Io

200mA DC

Output Currentmax

0.2A

Yükseklik

550μm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

Number Of Elements

1

Voltage Forward Vf Max If

1.25V @ 200mA

Power Dissipation Max

0.265W

Peak Reverse Current

100nA

Kurşunsuz Kodu

yes

Min. Çalışma Sıcaklığı

-55°C

Diode Element Material

SILICON

Speed

Small Signal =< 200mA (Io), Any Speed

Ambalaj

Tape & Reel (TR)