AFGHL50T65SQD

Teknik Özellikler

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Power Dissipation

268W

Pin Sayısı

3

Ürün Durumu

Active

Maximum Gate Emitter Voltage

±30.0V

Igbt Type

Trench Field Stop

Td Onoff25c

20ns/81ns

Channel Type

N

Temel Ürün No

AFGHL50

Continuous Collector Current

80A

Voltage Collector Emitter Breakdown Max

650 V

Collector Emitter Voltage Vceo Max

650 V

Test Conditions

400V, 50A, 4.7Ohm, 15V

Kılıf / Paket

TO-247-3

Tedarikçi Cihaz Paketi

TO-247-3

Pd Power Dissipation

268 W

Seri

Automotive, AEC-Q101

Vceon Max Vge Ic

2.1V @ 15V, 50A

Switching Energy

950µJ (on), 460µJ (off)

Currentcollector Ic Max

80 A

Current Collector Pulsed Icm

200 A

Technology

Si

Configuration

Single

Gate Charge

102 nC

Package Type

TO-247

Fabrika Paket Adedi

30

Collectoremitter Saturation Voltage

1.6 V

Paket

Tube

Montaj Tipi

Through Hole

Montaj Stili

Through Hole

RoHS

Details

Power Max

268 W

Minimum Operating Temperature

- 55 C

Continuous Collector Current At25 C

80 A

Maks. Çalışma Sıcaklığı

+ 175 C

Ürün Tipi

IGBT Transistors

Giriş Tipi

Standard

Maximum Collector Emitter Voltage

650 V