4N40

Teknik Özellikler

Onay Kuruluşu

UR

Montaj Tipi

Through Hole

Terminal Kaplaması

Tin (Sn)

Kurşunsuz Kodu

yes

Number Of Elements

1

Ambalaj

Tube

Turn On Time

50μs (Max)

Current Dc Forward If Max

60mA

Terminal Sayısı

3

Currentled Triggeriftmax

14mA

Jesd30 Code

R-PSFM-T3

Static Dvdt Min

500V/μs

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

400V

ECCN Kodu

EAR99

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Voltage Isolation

5300Vrms

Çalışma Sıcaklığı

-55°C~100°C

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

23A

REACH Uyumluluk Kodu

compliant

Currentholdih

1mA

Transistor Application

SWITCHING

Kılıf / Paket

6-DIP (0.300, 7.62mm)

Power Dissipationmax Abs

235W

Current On State It Rms Max

300mA

Polaritychannel Type

N-CHANNEL

Number Of Channels

1

Parça Durumu

Obsolete

Voltage Forward Vf Typ

1.1V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Zerocrossing Circuit

No

Yüzey Montaj

NO

Voltageoff State

400V

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Çıkış Tipi

SCR

Pulsed Drain Currentmax Idm

92A