NXV65HR82DS1

Teknik Özellikler

Pin Sayısı

16

Vgs Gatesource Voltage

- 20 V, + 20 V

Montaj Stili

Through Hole

Fabrika Paket Adedi

12

Transistor Polarity

N-Channel

Channel Mode

Enhancement

Continuous Drain Current Id

26A

Voltage Isolation

5000Vrms

Kılıf / Paket

16-SSIP Exposed Pad, Formed Leads

RoHS

Details

Paket

Tube

Akım

26 A

Qg Gate Charge

79.7 nC

Gerilim

650 V

Vds Drainsource Breakdown Voltage

650 V

Seri

Automotive, AEC-Q101

Power Dissipation

126W

Maks. Çalışma Sıcaklığı

+ 125 C

Vgs Th Gatesource Threshold Voltage

5 V

Number Of Channels

4 Channel

Id Continuous Drain Current

26 A

Rds On Drainsource Resistance

82 mOhms

Package Type

APMCA-A16

Configuration

H-Bridge

Number Of Elements Per Chip

4

Pd Power Dissipation

126 W

Technology

Si

Montaj Tipi

Through Hole

Ürün Tipi

MOSFET

Ambalaj

Tube

Minimum Operating Temperature

- 40 C

Channel Type

N Channel

Tip

MOSFET

Ürün Durumu

Active