NXH50M65L4Q1SG

Teknik Özellikler

Igbt Type

Trench Field Stop

Pd Power Dissipation

72 W

Collector Emitter Voltage Vceo Max

650 V

Configuration

Full Bridge

Power Max

86 W

Minimum Operating Temperature

- 40 C

Currentcollector Ic Max

48 A

Ambalaj

Tray

Ntc Thermistor

Yes

Collectoremitter Saturation Voltage

1.56 V

Ürün Tipi

IGBT Modules

Montaj Tipi

Chassis Mount

Input Capacitance Cies Vce

3.137 nF @ 20 V

Current Collector Cutoff Max

300 μA

Çalışma Sıcaklığı

175°C (TJ)

Ürün Durumu

Active

Tedarikçi Cihaz Paketi

56-PIM (93x47)

Fabrika Paket Adedi

21

Vceon Max Vge Ic

2.22V @ 15V, 50A

Paket

Tray

RoHS

Details

Kılıf / Paket

Module

Input

Standard

Voltage Collector Emitter Breakdown Max

650 V

Continuous Collector Current At25 C

48 A

Maks. Çalışma Sıcaklığı

+ 150 C