NXH010P90MNF1PTG

Teknik Özellikler

Continuous Drain Current Id

154A

Fabrika Paket Adedi

28

Vr Reverse Voltage

900 V

Minimum Operating Temperature

- 40 C

Kılıf / Paket

Module

Gate Charge Qg Max Vgs

546.4nC @ 15V

Rds On Max Id Vgs

14mOhm @ 100A, 15V

Vgs Gatesource Voltage

- 15 V, + 25 V

Technology

SiC

Drain To Source Voltage Vdss

900V

Power Max

328W (Tj)

Fet Type

2 N-Channel (Dual) Common Source

Maks. Çalışma Sıcaklığı

+ 150 C

Input Capacitance Ciss Max Vds

7007pF @ 450V

Ürün Durumu

Active

Fet Feature

Silicon Carbide (SiC)

Tip

Half Bridge Module

Montaj Stili

Press Fit

Montaj Tipi

Chassis Mount

Channel Type

Dual N Channel

Current Continuous Drain Id25

154A (Tc)

Ürün Tipi

Discrete Semiconductor Modules

Package Type

F1-2PACK

Vgsth Max Id

4.3V @ 40mA

Çalışma Sıcaklığı

-40°C ~ 150°C (TJ)

Power Dissipation

328W

Ambalaj

Tray

Paket

Tray