FGHL50T65MQDT

Teknik Özellikler

Collector Emitter Voltage Vceo Max

650 V

Vceon Max Vge Ic

1.8V @ 15V, 40A

Kılıf / Paket

TO-247-3

Ürün Tipi

IGBT Transistors

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Fabrika Paket Adedi

30

Power Dissipation

268W

Configuration

Single

Continuous Collector Current

80

Continuous Collector Current At25 C

80 A

Minimum Operating Temperature

- 55 C

Montaj Stili

Through Hole

Test Conditions

400V, 50A, 6Ohm, 15V

Current Collector Pulsed Icm

200 A

Tedarikçi Cihaz Paketi

TO-247-3

Voltage Collector Emitter Breakdown Max

650 V

Igbt Type

Trench Field Stop

Paket

Tube

Maximum Collector Emitter Voltage

650 V

Reverse Recovery Time Trr

79 ns

Giriş Tipi

Standard

Package Type

TO-247-3L

Pd Power Dissipation

268 W

Montaj Tipi

Through Hole

Power Max

268 W

Td Onoff25c

21ns/90ns

Technology

Si

Switching Energy

1.19mJ (on), 630μJ (off)

Collectoremitter Saturation Voltage

1.45V

Ürün Durumu

Active

Gate Charge

99 nC

Maks. Çalışma Sıcaklığı

+ 175 C

Maximum Gate Emitter Voltage

20V

Currentcollector Ic Max

80 A