EE-SX1088-W1

Teknik Özellikler

Reverse Voltage Dc

4V

Wavelength

940 nm

Kurşunsuz

Lead Free

Sensing Method

Through-Beam

Reverse Breakdown Voltage

4V

Tip

Unamplified

Max Power Dissipation

100mW

Algılama Mesafesi

0.134 (3.4mm)

Output Configuration

Phototransistor

Genişlik

3.4mm

Number Of Channels

1

Montaj Tipi

Chassis Mount

Additional Feature

HIGH RELIABILITY

Terminal

Wire

Radyasyon Dayanımı

No

Pin Sayısı

4

Collector Emitter Voltage Vceo

30V

Dark Currentmax

200nA

Output Voltage

30V

Power Dissipation

100mW

Rise Time

4μs

Çalışma Sıcaklığı

-25°C~85°C

Forward Voltage

1.2V

Max Collector Current

20mA

Parça Durumu

Obsolete

Slot Widthnom

3.4mm

Collectoremitter Breakdown Voltage

30V

Fonksiyon Sayısı

1

Montaj

Chassis Mount, Screw

Voltage Rated Dc

30V

Yayın Yılı

1999

RoHS Durumu

RoHS Compliant

Response Time

4μs, 4μs

Ambalaj

Bulk

Onstate Collector Currentnom

0.5mA

Nem Hassasiyeti (MSL)

Not Applicable

Fall Time Typ

4 μs

Forward Current

50mA

Input Current

30mA

Kılıf / Paket

Module, Pre-Wired