SI9936DY,518

Teknik Özellikler

Montaj Tipi

Surface Mount

Vgsth Max Id

1V @ 250μA

Power Max

900mW

Yayın Yılı

1997

Terminal Kaplaması

NICKEL PALLADIUM GOLD

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Qualification Status

Not Qualified

Çalışma Sıcaklığı

150°C TJ

Nem Hassasiyeti (MSL)

2 (1 Year)

Terminal Sayısı

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Seri

TrenchMOS™

Drain To Source Voltage Vdss

30V

Pin Sayısı

8

Temel Parça No

SI9936

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Type

2 N-Channel (Dual)

Ds Breakdown Voltagemin

30V

ECCN Kodu

EAR99

Number Of Elements

2

Rds On Max Id Vgs

50m Ω @ 5A, 10V

JESD-609 Kodu

e4

Jesd30 Code

R-PDSO-G8

Gate Charge Qg Max Vgs

35nC @ 10V

Pulsed Drain Currentmax Idm

40A

Drainsource On Resistancemax

0.05Ohm

Jedec95 Code

MS-012AA

Current Continuous Drain Id25

5A

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Fet Feature

Logic Level Gate

Drain Currentmax Abs Id

5A

RoHS Durumu

ROHS3 Compliant