PMWD26UN,518

Teknik Özellikler

Fet Type

2 N-Channel (Dual)

Parça Durumu

Obsolete

Operating Mode

ENHANCEMENT MODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Logic Level Gate

Ds Breakdown Voltagemin

20V

Pin Sayısı

8

Montaj Tipi

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

unknown

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

30m Ω @ 3.5A, 4.5V

Qualification Status

Not Qualified

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

700mV @ 1mA

Power Max

3.1W

Yüzey Montaj

YES

Input Capacitance Ciss Max Vds

1366pF @ 16V

Number Of Elements

2

Jesd30 Code

R-PDSO-G8

Drain To Source Voltage Vdss

20V

Terminal Sayısı

8

Yayın Yılı

2005

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Drainsource On Resistancemax

7800Ohm

Gate Charge Qg Max Vgs

23.6nC @ 4.5V

Seri

TrenchMOS™

Ambalaj

Tape & Reel (TR)

Jedec95 Code

MO-153AB

Drain Currentmax Abs Id

5.2A

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Current Continuous Drain Id25

7.8A