PMWD20XN,118

Teknik Özellikler

Gate Charge Qg Max Vgs

11.6nC @ 4.5V

Drainsource On Resistancemax

0.022Ohm

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Seri

TrenchMOS™

Ambalaj

Tape & Reel (TR)

Jedec95 Code

MO-153

Drain Currentmax Abs Id

10.4A

Transistor Element Material

SILICON

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Current Continuous Drain Id25

10.4A

Terminal Formu

GULL WING

Number Of Elements

2

Input Capacitance Ciss Max Vds

740pF @ 16V

Power Max

4.2W

Yüzey Montaj

YES

Jesd30 Code

R-PDSO-G8

Drain To Source Voltage Vdss

20V

Transistor Application

SWITCHING

Terminal Sayısı

8

Yayın Yılı

2005

REACH Uyumluluk Kodu

unknown

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

22m Ω @ 4.2A, 10V

Qualification Status

Not Qualified

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

1.5V @ 1mA

Parça Durumu

Obsolete

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Ds Breakdown Voltagemin

20V

Pin Sayısı

8

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount