PMGD8000LN,115

Teknik Özellikler

Input Capacitance Ciss Max Vds

18.5pF @ 5V

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Power Max

200mW

Gate Charge Qg Max Vgs

0.35nC @ 4.5V

Fet Type

2 N-Channel (Dual)

Power Dissipationmax Abs

0.2W

Drain Currentmax Abs Id

0.125A

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

30V

Drainsource On Resistancemax

8Ohm

Rds On Max Id Vgs

8 Ω @ 10mA, 4V

Transistor Element Material

SILICON

Pin Sayısı

6

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PDSO-G6

Ambalaj

Tape & Reel (TR)

Seri

TrenchMOS™

Current Continuous Drain Id25

125mA

Fet Feature

Logic Level Gate

Ds Breakdown Voltagemin

30V

Yüzey Montaj

YES

JESD-609 Kodu

e3

Parça Durumu

Obsolete

Yayın Yılı

1997

RoHS Durumu

ROHS3 Compliant

HTS Kodu

8541.21.00.95

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Vgsth Max Id

1.5V @ 100μA

Terminal Sayısı

6

Terminal Kaplaması

Tin (Sn)