PMGD780SN,115

Teknik Özellikler

Fabrika Tedarik Süresi

4 Weeks

RoHS

Lead free / RoHS Compliant

Input Capacitance Ciss Vds

23pF @ 30V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Seri

TrenchMOS™

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2010

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Online Catalog

N-Channel Logic Level Gate FETs

Drainsource On Resistancemax

0.92Ohm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Pcn Designspecification

Resin Hardener 02/Jul/2013

Reach Svhc

No SVHC

Fet Type

2 N-Channel (Dual)

Tepe Reflow Süresi (maks. sn)

30

Transistor Application

SWITCHING

Power Dissipation

410mW

HTS Kodu

8541.29.00.75

Family

FETs - Arrays

Pin Sayısı

6

Terminal Sayısı

6

Vgsth Max Id

2.5V @ 250碌A

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

2

Current Continuous Drain Id25

490mA

Ambalaj

Cut Tape (CT)

Tedarikçi Cihaz Paketi

6-TSSOP

Pcn Packaging

Lighter Reels 02/Jan/2014

JESD-609 Kodu

e3

Yüzey Montaj

YES

Fet Feature

Logic Level Gate

Drain Currentmax Abs Id

0.49A

Continuous Drain Current Id

490mA