PMGD400UN,115

Teknik Özellikler

Current Continuous Drain Id25

710mA

Seri

TrenchMOS™

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PDSO-G6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

1997

Parça Durumu

Obsolete

Yüzey Montaj

YES

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

30V

Fet Feature

Logic Level Gate

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Qualification Status

Not Qualified

HTS Kodu

8541.29.00.75

Terminal Sayısı

6

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

1V @ 250μA

ECCN Kodu

EAR99

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Input Capacitance Ciss Max Vds

43pF @ 25V

Fet Type

2 N-Channel (Dual)

Gate Charge Qg Max Vgs

0.89nC @ 4.5V

Power Max

410mW

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

Power Dissipationmax Abs

0.41W

Drain Currentmax Abs Id

0.71A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Pin Sayısı

6

Rds On Max Id Vgs

480m Ω @ 200mA, 4.5V

Drainsource On Resistancemax

0.48Ohm

Drain To Source Voltage Vdss

30V