PMGD175XN,115

Teknik Özellikler

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Drain Currentmax Abs Id

0.9A

Power Dissipationmax Abs

0.905W

Pin Sayısı

6

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Voltage Vdss

30V

Drainsource On Resistancemax

0.225Ohm

Rds On Max Id Vgs

225m Ω @ 1A, 4.5V

Input Capacitance Ciss Max Vds

75pF @ 15V

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Reference Standard

IEC-60134

Power Max

390mW

Gate Charge Qg Max Vgs

1.1nC @ 4.5V

Fet Type

2 N-Channel (Dual)

Transistor Application

SWITCHING

Vgsth Max Id

1.5V @ 250μA

Terminal Sayısı

6

Terminal Kaplaması

Tin (Sn)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Jesd30 Code

R-PDSO-G6

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

900mA

Number Of Elements

2

Yayın Yılı

2012

RoHS Durumu

ROHS3 Compliant

Fet Feature

Logic Level Gate

Ds Breakdown Voltagemin

30V

JESD-609 Kodu

e3

Yüzey Montaj

YES

Parça Durumu

Obsolete