PDTC143ES,126

Teknik Özellikler

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Currentcollector Ic Max

100mA

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Resistor Emitter Base R2

4.7 k Ω

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Resistor Base R1

4.7 k Ω

Power Max

500mW

Terminal Kaplaması

TIN

HTS Kodu

8541.21.00.95

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Current Collector Cutoff Max

1μA

Ambalaj

Tape & Box (TB)

Transistor Type

NPN - Pre-Biased

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA 5V

Number Of Elements

1

Jesd30 Code

R-PBCC-N3

Parça Durumu

Obsolete

Terminal Formu

NO LEAD

Terminal Sayısı

3

Yayın Yılı

2009

Terminal Pozisyonu

BOTTOM

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

unknown

Temel Parça No

DTC143

Voltage Collector Emitter Breakdown Max

50V

Polaritychannel Type

NPN

Pin Sayısı

3

Configuration

SINGLE WITH BUILT-IN RESISTOR

Montaj Tipi

Through Hole