PDTC123JE,115

Teknik Özellikler

Terminal Sayısı

3

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Yayın Yılı

2003

Terminal Pozisyonu

DUAL

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA 5V

Tepe Reflow Süresi (maks. sn)

40

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Number Of Elements

1

Jesd30 Code

R-PDSO-G3

Configuration

SINGLE WITH BUILT-IN RESISTOR

Montaj Tipi

Surface Mount

Power Dissipationmax Abs

0.15W

Temel Parça No

PDTC123

Polaritychannel Type

NPN

Pin Sayısı

3

Vcesatmax

0.3 V

Voltage Collector Emitter Breakdown Max

50V

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

RoHS Durumu

ROHS3 Compliant

Currentcollector Ic Max

100mA

Operating Temperature Max

150°C

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 21.36

Resistor Emitter Base R2

47 k Ω

Yüzey Montaj

YES

Power Dissipation Ambientmax

0.15W

Current Collector Cutoff Max

1μA

HTS Kodu

8541.21.00.95

Kılıf / Paket

SC-75, SOT-416

Collectorbase Capacitancemax

3.5pF

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Transistor Type

NPN - Pre-Biased

Resistor Base R1

2.2 k Ω

Qualification Status

Not Qualified

Terminal Kaplaması

Tin (Sn)