PDTC123EEF,115

Teknik Özellikler

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

RoHS Durumu

ROHS3 Compliant

Currentcollector Ic Max

100mA

Operating Temperature Max

150°C

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Resistor Emitter Base R2

2.2 k Ω

Yüzey Montaj

YES

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Resistor Base R1

2.2 k Ω

Qualification Status

Not Qualified

Terminal Kaplaması

TIN

Power Max

250mW

Current Collector Cutoff Max

1μA

Kılıf / Paket

SC-89, SOT-490

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Transistor Type

NPN - Pre-Biased

Dc Current Gain Hfe Min Ic Vce

30 @ 20mA 5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Number Of Elements

1

Jesd30 Code

R-PDSO-F3

Terminal Sayısı

3

Terminal Formu

FLAT

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Yayın Yılı

2009

Temel Parça No

PDTC123

Polaritychannel Type

NPN

Pin Sayısı

3

Voltage Collector Emitter Breakdown Max

50V

Configuration

SINGLE WITH BUILT-IN RESISTOR

Montaj Tipi

Surface Mount