PDTC114YE,115

Teknik Özellikler

Transistor Type

NPN - Pre-Biased

Temel Parça No

PDTC114

Dc Current Gain Hfe Min Ic Vce

100 @ 5mA 5V

Resistor Emitter Base R2

47 k Ω

Pin Sayısı

3

Current Collector Cutoff Max

1μA

JESD-609 Kodu

e3

Yüzey Montaj

YES

Kılıf / Paket

SC-75, SOT-416

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Tepe Reflow Süresi (maks. sn)

40

Yayın Yılı

2003

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Vcesatmax

0.3 V

Parça Durumu

Obsolete

Number Of Elements

1

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Terminal Sayısı

3

Collectorbase Capacitancemax

3.5pF

Polaritychannel Type

NPN

Operating Temperature Max

150°C

Power Max

150mW

Jesd30 Code

R-PDSO-G3

Power Dissipationmax Abs

0.15W

Voltage Collector Emitter Breakdown Max

50V

RoHS Durumu

ROHS3 Compliant

Currentcollector Ic Max

100mA

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Qualification Status

Not Qualified

Transistor Application

SWITCHING

HTS Kodu

8541.21.00.95

Resistor Base R1

10 k Ω

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN RESISTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Ambientmax

0.15W