PDTC114TS,126

Teknik Özellikler

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Additional Feature

BUILT IN BIAS RESISTOR

JESD-609 Kodu

e3

Yüzey Montaj

NO

Pin Sayısı

3

Current Collector Cutoff Max

1μA

Transistor Type

NPN - Pre-Biased

Dc Current Gain Hfe Min Ic Vce

200 @ 1mA 5V

Temel Parça No

PDTC114

Operating Temperature Max

150°C

Power Max

500mW

Polaritychannel Type

NPN

ECCN Kodu

EAR99

Ambalaj

Tape & Box (TB)

Montaj Tipi

Through Hole

Terminal Sayısı

3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

unknown

Yayın Yılı

2006

Number Of Elements

1

Parça Durumu

Obsolete

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Terminal Pozisyonu

BOTTOM

Currentcollector Ic Max

100mA

Terminal Kaplaması

TIN

Voltage Collector Emitter Breakdown Max

50V

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

O-PBCY-T3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN RESISTOR

Resistor Base R1

10 k Ω