PDTA123JE,115

Teknik Özellikler

Operating Temperature Max

150°C

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN RESISTOR

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Voltage Collector Emitter Breakdown Max

50V

Resistor Base R1

2.2 k Ω

Tepe Reflow Süresi (maks. sn)

40

Power Max

150mW

Current Collector Cutoff Max

1μA

Parça Durumu

Obsolete

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA 5V

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Power Dissipationmax Abs

0.15W

Temel Parça No

PDTA123

Yayın Yılı

2003

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yüzey Montaj

YES

Transistor Type

PNP - Pre-Biased

ECCN Kodu

EAR99

Resistor Emitter Base R2

47 k Ω

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Qualification Status

Not Qualified

Terminal Kaplaması

Tin (Sn)

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 21

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Terminal Formu

GULL WING

Polaritychannel Type

PNP

Jesd30 Code

R-PDSO-G3

Kılıf / Paket

SC-75, SOT-416

Currentcollector Ic Max

100mA

Terminal Sayısı

3

Terminal Pozisyonu

DUAL

Pin Sayısı

3