PBLS4002V,115

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA

Terminal Formu

FLAT

Power Max

300mW

Jesd30 Code

R-PDSO-F6

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Type

1 NPN Pre-Biased, 1 PNP

Parça Durumu

Obsolete

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Transistor Application

SWITCHING

Operating Temperature Max

150°C

Ambalaj

Tape & Reel (TR)

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 1

Yayın Yılı

2009

ECCN Kodu

EAR99

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA 5V / 150 @ 100mA 2V

Qualification Status

Not Qualified

Transition Frequency

300MHz

Pin Sayısı

6

Current Collector Cutoff Max

1μA

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

SOT-563, SOT-666

Montaj Tipi

Surface Mount

Voltage Collector Emitter Breakdown Max

50V 40V

Terminal Kaplaması

Tin (Sn)

Temel Parça No

PBLS4002

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor Emitter Base R2

4.7k Ω

Polaritychannel Type

NPN AND PNP

Number Of Elements

2

Resistor Base R1

4.7k Ω

Transistor Element Material

SILICON

Frequency Transition

300MHz

Power Dissipationmax Abs

0.3W

Currentcollector Ic Max

100mA 500mA