PBLS2003S,115

Teknik Özellikler

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Yayın Yılı

2009

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Transistor Application

SWITCHING

Operating Temperature Max

150°C

Ambalaj

Tape & Reel (TR)

Qualification Status

Not Qualified

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V / 150 @ 2A 2V

Power Max

1.5W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA / 355mV @ 300mA, 3A

Terminal Formu

GULL WING

Transistor Type

1 NPN Pre-Biased, 1 PNP

Parça Durumu

Obsolete

Terminal Sayısı

8

Jesd30 Code

R-PDSO-G8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Temel Parça No

PBLS2003

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor Emitter Base R2

10k Ω

Montaj Tipi

Surface Mount

Voltage Collector Emitter Breakdown Max

50V 20V

Terminal Kaplaması

NICKEL PALLADIUM GOLD

Turn On Timemax Ton

41ns

Frequency Transition

100MHz

Power Dissipationmax Abs

1.5W

Currentcollector Ic Max

100mA 3A

Polaritychannel Type

NPN AND PNP

Number Of Elements

2

Resistor Base R1

10k Ω

Transistor Element Material

SILICON

Turn Off Timemax Toff

205ns

Current Collector Cutoff Max

1μA 100nA

JESD-609 Kodu

e4

Transition Frequency

100MHz

Pin Sayısı

8

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)