MRF8P9040GNR1

Teknik Özellikler

Transistor Application

AMPLIFIER

Transistor Type

LDMOS (Dual)

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

10 Weeks

Operating Temperature Max

225°C

Current Test

320mA

Yayın Yılı

2006

Tepe Reflow Süresi (maks. sn)

40

Usage Level

Military grade

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

70V

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

260

Terminal Formu

GULL WING

Parça Durumu

Not For New Designs

Nem Hassasiyeti (MSL)

3 (168 Hours)

Gain

19.1dB

Qualification Status

Not Qualified

HTS Kodu

8541.29.00.75

Terminal Sayısı

4

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Terminal Kaplaması

Matte Tin (Sn)

Number Of Elements

2

Jesd30 Code

R-PDFM-G4

Polaritychannel Type

N-CHANNEL

Voltage Test

28V

JESD-609 Kodu

e3

Power Output

4W

Frekans

960MHz

Configuration

COMMON SOURCE, 2 ELEMENTS

Case Connection

SOURCE

Kılıf / Paket

TO-270BB

Nominal Gerilim

70V