MRF6V13250HSR5

Teknik Özellikler

Transistor Element Material

SILICON

Parça Durumu

Active

Yüzey Montaj

YES

Current Test

100mA

Case Connection

SOURCE

Temel Parça No

MRF6V13250

Configuration

SINGLE

Tepe Reflow Sıcaklığı (°C)

260

Fet Technology

METAL-OXIDE SEMICONDUCTOR

HTS Kodu

8541.29.00.75

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

10 Weeks

Power Dissipationmax Abs

476W

Ds Breakdown Voltagemin

120V

Qualification Status

Not Qualified

Transistor Application

AMPLIFIER

Operating Temperature Max

225°C

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Nominal Gerilim

120V

Tepe Reflow Süresi (maks. sn)

40

Gain

22.7dB

Transistor Type

LDMOS

Frekans

1.3GHz

Terminal Sayısı

2

Kılıf / Paket

NI-780S

RoHS Durumu

ROHS3 Compliant

Terminal Formu

FLAT

Jesd30 Code

R-CDFP-F2

Power Output

250W

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Nem Hassasiyeti (MSL)

Not Applicable

Voltage Test

50V

Yayın Yılı

2011