MRF6S19140HSR3

Teknik Özellikler

Polaritychannel Type

N-CHANNEL

Operating Temperature Max

225°C

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

68V

Transistor Application

AMPLIFIER

Frekans

1.93GHz~1.99GHz

Usage Level

Military grade

Nominal Gerilim

68V

Transistor Type

LDMOS

Gain

16dB

Tepe Reflow Süresi (maks. sn)

40

Terminal Formu

FLAT

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Kılıf / Paket

NI-880S

Yayın Yılı

2007

Voltage Test

28V

Jesd30 Code

R-CDFP-F2

Power Output

29W

Nem Hassasiyeti (MSL)

3 (168 Hours)

Number Of Elements

1

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Case Connection

SOURCE

Current Test

1.15A

HTS Kodu

8542.31.00.01

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Temel Parça No

MRF6S19140

Configuration

SINGLE

Power Dissipationmax Abs

530W

Fabrika Tedarik Süresi

10 Weeks