BF998WR,115

Teknik Özellikler

Current Rating Amps

30mA

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

4

HTS Kodu

8541.21.00.75

Case Connection

SOURCE

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Transistor Type

N-Channel Dual Gate

Tepe Reflow Sıcaklığı (°C)

260

Frekans

200MHz

Current Test

10mA

RoHS Durumu

ROHS3 Compliant

Temel Parça No

BF998

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

12V

Voltage Test

8V

Jesd30 Code

R-PDSO-G4

Nominal Gerilim

12V

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Yüzey Montaj

YES

Power Dissipationmax Abs

0.3W

Yayın Yılı

1995

Parça Durumu

Obsolete

Tepe Reflow Süresi (maks. sn)

40

Pin Sayısı

4

Additional Feature

LOW NOISE

Noise Figure

0.6dB

Transistor Application

AMPLIFIER

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Temperature Max

150°C

Kılıf / Paket

SC-82A, SOT-343

Operating Mode

DUAL GATE, DEPLETION MODE

Transistor Element Material

SILICON

Drain Currentmax Abs Id

0.03A