BF998R,215

Teknik Özellikler

Drain Currentmax Abs Id

0.03A

Operating Temperature Max

150°C

Kılıf / Paket

SOT-143R

Operating Mode

DUAL GATE, DEPLETION MODE

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Additional Feature

LOW NOISE

Pin Sayısı

4

Noise Figure

0.6dB

Transistor Application

AMPLIFIER

Yayın Yılı

1996

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Obsolete

Yüzey Montaj

YES

Power Dissipationmax Abs

0.2W

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Nominal Gerilim

12V

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

12V

Voltage Test

8V

Jesd30 Code

R-PDSO-G4

RoHS Durumu

ROHS3 Compliant

Temel Parça No

BF998

Transistor Type

N-Channel Dual Gate

Tepe Reflow Sıcaklığı (°C)

260

Frekans

200MHz

Current Test

10mA

Case Connection

SOURCE

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

HTS Kodu

8541.21.00.75

Current Rating Amps

30mA

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

4