BF998,215

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

4

Current Rating Amps

30mA

HTS Kodu

8541.21.00.75

Number Of Elements

1

Case Connection

SOURCE

Terminal Kaplaması

Tin (Sn)

Current Test

10mA

Transistor Type

N-Channel Dual Gate

Tepe Reflow Sıcaklığı (°C)

260

Frekans

200MHz

Temel Parça No

BF998

RoHS Durumu

ROHS3 Compliant

Voltage Test

8V

Ds Breakdown Voltagemin

12V

Jesd30 Code

R-PDSO-G4

Qualification Status

Not Qualified

Nominal Gerilim

12V

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Power Dissipationmax Abs

0.2W

Yüzey Montaj

YES

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Obsolete

Yayın Yılı

1996

Additional Feature

LOW NOISE

Pin Sayısı

4

Noise Figure

0.6dB

Transistor Application

AMPLIFIER

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

GULL WING

Operating Mode

DUAL GATE, DEPLETION MODE

Transistor Element Material

SILICON

Operating Temperature Max

150°C

Kılıf / Paket

TO-253-4, TO-253AA

Drain Currentmax Abs Id

0.03A