BF994S,215

Teknik Özellikler

Gain

25dB

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Case Connection

SOURCE

Terminal Sayısı

4

Configuration

SINGLE WITH BUILT-IN DIODE

Current Rating Amps

30mA

HTS Kodu

8541.21.00.75

Jesd30 Code

R-PDSO-G4

Ds Breakdown Voltagemin

20V

Voltage Test

15V

Qualification Status

Not Qualified

Nominal Gerilim

20V

Current Test

10mA

Frekans

200MHz

Transistor Type

N-Channel Dual Gate

Tepe Reflow Sıcaklığı (°C)

260

Temel Parça No

BF994

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

13 Weeks

Parça Durumu

Obsolete

Tepe Reflow Süresi (maks. sn)

40

Yayın Yılı

1996

Noise Figure

1dB

Transistor Application

AMPLIFIER

Pin Sayısı

4

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Power Dissipationmax Abs

0.2W

Yüzey Montaj

YES

Operating Mode

DUAL GATE, DEPLETION MODE

Transistor Element Material

SILICON

Kılıf / Paket

TO-253-4, TO-253AA

Operating Temperature Max

150°C

Drain Currentmax Abs Id

0.03A

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

GULL WING