BF992,215

Teknik Özellikler

Terminal Formu

GULL WING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

0.04A

Operating Temperature Max

150°C

Kılıf / Paket

TO-253-4, TO-253AA

Transistor Element Material

SILICON

Operating Mode

DUAL GATE, DEPLETION MODE

Power Dissipationmax Abs

0.2W

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Pin Sayısı

4

Transistor Application

AMPLIFIER

Noise Figure

1.2dB

Yayın Yılı

1999

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Obsolete

Fabrika Tedarik Süresi

13 Weeks

RoHS Durumu

ROHS3 Compliant

Temel Parça No

BF992

Transistor Type

N-Channel Dual Gate

Tepe Reflow Sıcaklığı (°C)

260

Frekans

200MHz

Current Test

15mA

Nominal Gerilim

20V

Qualification Status

Not Qualified

Voltage Test

10V

Ds Breakdown Voltagemin

20V

Jesd30 Code

R-PDSO-G4

HTS Kodu

8541.21.00.75

Current Rating Amps

40mA

Configuration

SINGLE WITH BUILT-IN DIODE

Feedback Capmax Crss

0.04 pF

Terminal Sayısı

4

Number Of Elements

1

Case Connection

SOURCE

Terminal Kaplaması

Tin (Sn)