BF1212WR,115

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Transistor Application

AMPLIFIER

Drain Currentmax Abs Id

0.03A

Operating Mode

DUAL GATE, ENHANCEMENT MODE

Number Of Elements

1

REACH Uyumluluk Kodu

unknown

Noise Figure

0.9dB

Feedback Capmax Crss

0.03 pF

Transistor Element Material

SILICON

Frekans

400MHz

Yüzey Montaj

YES

Kılıf / Paket

SC-82A, SOT-343

Current Test

12mA

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

40

Jesd30 Code

R-PDSO-G4

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

4

ECCN Kodu

EAR99

Gain

30dB

Ds Breakdown Voltagemin

6V

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Qualification Status

Not Qualified

Operating Temperature Max

150°C

Power Dissipationmax Abs

0.18W

Parça Durumu

Obsolete

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

SOURCE

Temel Parça No

BF1212

Voltage Test

5V

Additional Feature

LOW NOISE

Yayın Yılı

2003

Nominal Gerilim

6V

Pin Sayısı

4

Transistor Type

N-Channel Dual Gate

Current Rating Amps

30mA

Nem Hassasiyeti (MSL)

1 (Unlimited)