BF1212,215

Teknik Özellikler

Gain

30dB

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

6V

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

40

Jesd30 Code

R-PDSO-G4

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

4

Transistor Type

N-Channel Dual Gate

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Rating Amps

30mA

HTS Kodu

8541.21.00.75

Power Dissipationmax Abs

0.18W

Parça Durumu

Obsolete

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Temperature Max

150°C

Qualification Status

Not Qualified

Case Connection

SOURCE

Temel Parça No

BF1212

Additional Feature

LOW NOISE

Voltage Test

5V

Pin Sayısı

4

Nominal Gerilim

6V

Yayın Yılı

2003

Number Of Elements

1

Noise Figure

0.9dB

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Drain Currentmax Abs Id

0.03A

Transistor Application

AMPLIFIER

Operating Mode

DUAL GATE, ENHANCEMENT MODE

Frekans

400MHz

Kılıf / Paket

TO-253-4, TO-253AA

Yüzey Montaj

YES

Current Test

12mA

Feedback Capmax Crss

0.03 pF

Transistor Element Material

SILICON