BF1211WR,115

Teknik Özellikler

Transistor Type

N-Channel Dual Gate

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Rating Amps

30mA

HTS Kodu

8541.21.00.75

Power Dissipationmax Abs

0.18W

Parça Durumu

Obsolete

Configuration

COMPLEX

Qualification Status

Not Qualified

Operating Temperature Max

150°C

Case Connection

SOURCE

Temel Parça No

BF1211

Additional Feature

LOW NOISE

Voltage Test

5V

Pin Sayısı

4

Nominal Gerilim

6V

Yayın Yılı

2003

Gain

29dB

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

6V

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

40

Jesd30 Code

R-PDSO-G4

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

4

Frekans

400MHz

Kılıf / Paket

SC-82A, SOT-343

Yüzey Montaj

YES

Current Test

15mA

Feedback Capmax Crss

0.03 pF

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

unknown

Number Of Elements

2

Noise Figure

0.9dB

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Drain Currentmax Abs Id

0.03A

Transistor Application

AMPLIFIER