BF1207,115

Teknik Özellikler

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Gain

30dB

Ds Breakdown Voltagemin

6V

Jesd30 Code

R-PDSO-G6

Terminal Sayısı

6

Terminal Kaplaması

Matte Tin (Sn)

Tepe Reflow Süresi (maks. sn)

40

RoHS Durumu

ROHS3 Compliant

HTS Kodu

8541.21.00.75

Transistor Type

N-Channel Dual Gate

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Rating Amps

30mA

Additional Feature

LOW NOISE

Voltage Test

5V

Pin Sayısı

6

Nominal Gerilim

6V

Yayın Yılı

2005

Configuration

SINGLE

Parça Durumu

Obsolete

Power Dissipationmax Abs

0.18W

Qualification Status

Not Qualified

Operating Temperature Max

150°C

Case Connection

ISOLATED

Noise Figure

1.3dB

REACH Uyumluluk Kodu

unknown

Number Of Elements

2

Transistor Application

AMPLIFIER

Drain Currentmax Abs Id

0.03A

Operating Mode

DUAL GATE, ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Current Test

18mA

Frekans

400MHz

Yüzey Montaj

YES

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Transistor Element Material

SILICON