BF1100,215

Teknik Özellikler

Noise Figure

2dB

REACH Uyumluluk Kodu

unknown

Number Of Elements

2

Operating Mode

DUAL GATE, ENHANCEMENT MODE

Transistor Application

AMPLIFIER

Drain Currentmax Abs Id

0.03A

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

260

Current Test

10mA

Kılıf / Paket

TO-253-4, TO-253AA

Yüzey Montaj

YES

Frekans

800MHz

Transistor Element Material

SILICON

Feedback Capmax Crss

0.035 pF

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

14V

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Terminal Sayısı

4

Jesd30 Code

R-PDSO-G4

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

40

HTS Kodu

8541.21.00.75

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Rating Amps

30mA

Transistor Type

N-Channel Dual Gate

Pin Sayısı

4

Yayın Yılı

1995

Nominal Gerilim

14V

Voltage Test

9V

Additional Feature

LOW NOISE

Case Connection

SOURCE

Temel Parça No

BF1100

Configuration

COMPLEX

Parça Durumu

Obsolete

Operating Temperature Max

150°C

Qualification Status

Not Qualified